Approaching microwave photon sensitivity with Al Josephson junctions

• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Leonid S. Revin,
• Dmitry A. Ladeynov,
• Anton A. Yablokov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 582–589, doi:10.3762/bjnano.13.50

• of three and more photons, with a dark count time above 0.01 s. Keywords: Josephson junction; microwave photons; single photon counter; thermal activation; Introduction The development of a single photon counter (SPC) for microwave frequencies of tens of gigahertz has been required for several

• Josephson junction. One can see a standard behavior when the distribution width grows monotonically with increase of the temperature. Here, the violet dashed line shows the quantum regime and the red solid curve shows the thermal activation regime. The lifetime of the junction as a function of the bias

The role of sulfonate groups and hydrogen bonding in the proton conductivity of two coordination networks

• Ali Javed,
• Felix Steinke,
• Stephan Wöhlbrandt,
• Hana Bunzen,
• Norbert Stock and
• Michael Tiemann

Beilstein J. Nanotechnol. 2022, 13, 437–443, doi:10.3762/bjnano.13.36

• Information File 1, Figure S2). Figure 2 shows the Nyquist plots of the impedance spectra (i.e., imaginary vs real part of the impedance Z) for both materials at 22 °C and 90% r.h., before and after thermal activation. The term “thermal activation” here stands for exposure to 80 °C at ambient pressure for 24

• second one is irreversibly erased by thermal activation; the additional semicircle is no longer observed and, hence, the standard equivalent circuit model can be applied once the sample has been activated. This is further illustrated in Figure 4, which shows the Bode plots (i.e., impedance Z and phase

• angle Φ vs frequency f) of the measurements from Figure 2. For the non-activated Mg-CP sample, the phase angle shows two distinct features, namely a maximum at ca. 102 Hz and a shoulder at ca. 105 Hz, corresponding to two distinguishable conduction modes. After thermal activation, only a single broad

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

• Rahil Hosseinifar,
• Evangelos Golias,
• Ivar Kumberg,
• Quentin Guillet,
• Karl Frischmuth,
• Sangeeta Thakur,
• Mario Fix,
• Manfred Albrecht,
• Florian Kronast and
• Wolfgang Kuch

Beilstein J. Nanotechnol. 2022, 13, 74–81, doi:10.3762/bjnano.13.5

• attributed to thermally activated domain-wall motion. In another study, it has been demonstrated that ultrafast laser pulses can indeed move magnetic domain walls, which however could not simply be explained by thermal activation due to the transient heating by the laser pulse alone, but had to be attributed

Molecular assemblies on surfaces: towards physical and electronic decoupling of organic molecules

• Sabine Maier and
• Meike Stöhr

Beilstein J. Nanotechnol. 2021, 12, 950–956, doi:10.3762/bjnano.12.71

• molecules, offering unique opportunities for the bottom-up assembly of novel carbon-based materials using on-surface chemistry [48][49]. However, the significantly reduced catalytic activity on non-metallic substrates requires exploring alternative reaction mechanisms beyond thermal activation, for example

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• electronic conduction properties of the material without needing to rely on thermal activation [37]. And finally in the category of electronic applications, a number of studies have used the HIM to direct-write Josephson tunnel junctions into thin films of high-transition-temperature superconductors. This

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• . First, we assemble the switching current distributions (Figure 1) and extract values for the mean switching current ⟨ISW⟩ and standard deviation σ, which are plotted in Figure 2 for different temperatures of the chip. The decrease of ⟨ISW⟩ with temperature increase indicates that here the thermal

• activation of the phase is the main switching mechanism. At temperatures below T ≈ 300 mK there is a saturation both in ⟨ISW⟩ and σ. The behavior of σ(T) in the entire temperature range of the experiment shows the well-known signature of phase diffusion, observed for example in [21][25][31]. The presence of

The impact of crystal size and temperature on the adsorption-induced flexibility of the Zr-based metal–organic framework DUT-98

• Simon Krause,
• Volodymyr Bon,
• Hongchu Du,
• Rafal E. Dunin-Borkowski,
• Ulrich Stoeck,
• Irena Senkovska and
• Stefan Kaskel

Beilstein J. Nanotechnol. 2019, 10, 1737–1744, doi:10.3762/bjnano.10.169

• interesting candidate for water capture applications [39][40][41]. In the original report on DUT-98, an irreversible contraction of the pores upon thermal activation at 80 °C in vacuum was described. An unknown structural transition, different from the contraction to DUT-98cp, takes place, and the formation

• conducted under vacuum on supercritically activated DUT-98(2) in the temperature range of 30–350 °C. These conditions are often used for the thermal activation of MOFs and were previously applied in the analysis of DUT-98(1) [23]. In the range of 30–75 °C, no change in the PXRD patterns could be observed

Tuning the performance of vanadium redox flow batteries by modifying the structural defects of the carbon felt electrode

• Ditty Dixon,
• Deepu Joseph Babu,
• Aiswarya Bhaskar,
• Hans-Michael Bruns,
• Joerg J. Schneider,
• Frieder Scheiba and
• Helmut Ehrenberg

Beilstein J. Nanotechnol. 2019, 10, 1698–1706, doi:10.3762/bjnano.10.165

• electrochemical performance in a VRFB compared to the untreated sample with fewer defects. The commercial carbon felts (GFD-type) used as electrode materials in the present study are made out of a polyacrylonitrile (PAN) precursor. In contrast to the commonly employed thermal activation process, the plasma

• the combination of various plasma techniques (O2/N2) and thermal activation could produce an ideal electrode for the anode in VRFB. Conclusion When PAN-based GFD-type felts are subjected to N2 plasma treatment, defects are formed on the carbon felt. In addition to the increase in the amount of

Accurate control of the covalent functionalization of single-walled carbon nanotubes for the electro-enzymatically controlled oxidation of biomolecules

• Naoual Allali,
• Veronika Urbanova,
• Mathieu Etienne,
• Xavier Devaux,
• Martine Mallet,
• Brigitte Vigolo,
• Jean-Joseph Adjizian,
• Chris P. Ewels,
• Sven Oberg,
• Alexander V. Soldatov,
• Edward McRae,
• Yves Fort,
• Manuel Dossot and
• Victor Mamane

Beilstein J. Nanotechnol. 2018, 9, 2750–2762, doi:10.3762/bjnano.9.257

• CNTs in the aim of making an electrochemical biosensor, we performed the oxidation step using microwave irradiation. Microwaves indeed promote oxidation through a fast thermal activation, which enables performing the oxidation step in only a few minutes and allows one to roughly control the number of

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• of thermal activation via, e.g., a high-temperature annealing process a significant fraction of potential dopants will remain on interstitial sites [3]. The decreasing number of Si–Si bonds per Si NC atom is a crucial point for the increase of dopant formation energies [4]. These factors impede

• low-excitation measurements shown in [44]. For approx. T > 150 K the intensity drops below unity due to the thermal activation of non-radiative recombination channels [36][44]. The relative PL-intensities of all samples with respect to their 5 K values end up in the same range of values at room

The role of ligands in coinage-metal nanoparticles for electronics

• Ioannis Kanelidis and
• Tobias Kraus

Beilstein J. Nanotechnol. 2017, 8, 2625–2639, doi:10.3762/bjnano.8.263

• moieties facilitate charge transfer with the conductivities exhibiting a clear Arrhenius behavior implying charge transfer driven by thermal activation in an electron hopping mechanism. Maximal conductivity was reached when the aromatic groups of ligands of adjacent particles were stacked [59]. Whatever

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• carriers dynamics. This is very important for the intended photovoltaic applications of these nanowires, in which the collection of charge carriers is a key issue. On average, for growth on the GaAs(111)B substrate, the temperature dependence of the PL showed the thermal activation of non-radiative de

Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• slopes the change-over of which occur at around 125 K, as shown in Figure 3b. The curves for T > 125 K (left part) show more pronounced temperature dependence, which indicates that thermal activation plays an important role during the transport [37]. Both the left and right regions of Figure 3b are well

• density is subject to thermal activation. The activation energy Ea is almost constant with decreasing voltage, and calculated to be about 0.41 eV for the voltages below 0.7 V, which is regarded as the CT energy between VOPc and F16CuPc. Region C under high bias conditions corresponds to the complete SCL

• –voltage characteristics of Au/F16CuPc/VOPc/F16CuPc/Au diode as a function of temperature. (b) Current–temperature characteristics at different voltages. (c) Applied voltage dependence of thermal activation energy. Acknowledgements The authors acknowledge Paul Plocica and Eric Pankenin for their technical

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS₂ in O₂-controlled atmosphere

• Aurora Piazza,
• Filippo Giannazzo,
• Gianpiero Buscarino,
• Gabriele Fisichella,
• Antonino La Magna,
• Fabrizio Roccaforte,
• Marco Cannas,
• Franco Mario Gelardi and
• Simonpietro Agnello

Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44

• ]. Nevertheless, thermal activation has the drawback that it could induce relevant changes to the Gr structure because of the high annealing temperatures or reactions with ambient gas molecules [13][14][15][16][17][18][19]. We have recently shown [19] that p-type doping of Gr can be induced by thermal treatment

Ordering of Zn-centered porphyrin and phthalocyanine on TiO₂(011): STM studies

• Piotr Olszowski,
• Lukasz Zajac,
• Szymon Godlewski,
• Bartosz Such,
• Rémy Pawlak,
• Antoine Hinaut,
• Res Jöhr,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymonski

Beilstein J. Nanotechnol. 2017, 8, 99–107, doi:10.3762/bjnano.8.11

• ] crystallographic direction (i.e., along the substrate reconstruction rows). As discussed above, that direction is also adopted by the flat laying molecules of the wetting layer on which the 2D islands are formed. Likely due to the thermal activation, the molecules could reach a stable minimum energy configuration

Fast diffusion of silver in TiO₂ nanotube arrays

• Wanggang Zhang,
• Yiming Liu,
• Diaoyu Zhou,
• Hui Wang,
• Wei Liang and
• Fuqian Yang

Beilstein J. Nanotechnol. 2016, 7, 1129–1140, doi:10.3762/bjnano.7.105

• for the heat treatment of the TiO2 nanotube arrays with Ag nanofilm enhances the migration of Ag atoms, suggesting that the migration of Ag atoms is a thermal activation process. Figure 6 shows SEM images of the TiO2 nanotube arrays with Ag nanofilm, which were heat treated at 400 °C for 1, 2, 3 and 4

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

Evidence for non-conservative current-induced forces in the breaking of Au and Pt atomic chains

• Carlos Sabater,
• Carlos Untiedt and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2015, 6, 2338–2344, doi:10.3762/bjnano.6.241

• ensemble of breaking events can be described by thermal activation over a distribution of barrier heights. Dissipation raises the effective temperature above the bath temperature T according to [19], with being TV determined by the applied bias voltage as [20], where γ = 60 K·V−1/2·nm−1/2 and L is the

• . The other atomic chain configurations, which may have a less symmetric arrangement of the atoms at the connections to the banks, will only break by regular thermal activation due to Joule heating. The threshold of about 0.2 V for a runaway mode for Au obtained in the model calculation of Lü et al. [6

Lower nanometer-scale size limit for the deformation of a metallic glass by shear transformations revealed by quantitative AFM indentation

• Arnaud Caron and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2015, 6, 1721–1732, doi:10.3762/bjnano.6.176

• banding events that can no longer be distinguished in load–displacement curves. Further, the effect of temperature on the transition from serrated to homogeneous plastic flow of metallic glasses has been discussed in [25] on the basis of the thermal activation of STZs [21]. On macroscopic scale, the flow

Heterometal nanoparticles from Ru-based molecular clusters covalently anchored onto functionalized carbon nanotubes and nanofibers

• Deborah Vidick,
• Xiaoxing Ke,
• Michel Devillers,
• Claude Poleunis,
• Arnaud Delcorte,
• Pietro Moggi,
• Gustaaf Van Tendeloo and
• Sophie Hermans

Beilstein J. Nanotechnol. 2015, 6, 1287–1297, doi:10.3762/bjnano.6.133

• SIMS as well as model compounds in solution on activated carbon functionalized with the same chelating phosphines [52]. It was shown to take place effectively to give covalent anchoring of the cluster in a molecular form via metal–phosphorus bonds. Thermal activation Thermogravimetric analysis of the

• observation to the fact that XPS behaves as a bulk elemental analysis technique for MWNTs. After thermal activation, most M/C ratio values decrease slightly, indicating that agglomeration occurred but to a limited extent. This process is more important for Au-based clusters (clusters 5 to 8). The Ru/M ratios

• ) exhibits particles with diameters <2 nm. Even if the final particles are ultrasmall, limited agglomeration occurred during thermal activation as the final particles sizes are slightly larger than the size of a single cluster (≈0.4 nm). The ligand substitution strategy for anchoring and stabilization of

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• ) measurement was developed to extract the Schottky barrier height for silicon planar devices [31], it requires a more sophisticated setup for CNFETs due to the small capacitance in the metal–SWCNT contact area [32]. Current–voltage (I–V) measurements performed at different temperatures (also called the thermal

• activation energy method) are more suitable for extracting the Schottky barrier height at the metal–SWCNT contacts in CNFETs [33][34]. According to the thermionic emission theory, the thermionic current through the metal–semiconductor contact is proportional to the measurement temperature [35]. The SB height

Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses

• Pravin Kumar,
• Udai Bhan Singh,
• Kedar Mal,
• Sunil Ojha,
• Indra Sulania,
• Dinakar Kanjilal,
• Dinesh Singh and
• Vidya Nand Singh

Beilstein J. Nanotechnol. 2014, 5, 1864–1872, doi:10.3762/bjnano.5.197

• -organized cobalt clusters in a gold substrate upon thermal activation was reported by Padovani et al. [27]. When the surface energy of the metallic film is larger than that of the substrate, then surface nano-structuring is due to ion-induced sputtering of the film followed by the dewetting of metallic

Restructuring of an Ir(210) electrode surface by potential cycling

• Khaled A. Soliman,
• Dieter M. Kolb,
• Ludwig A. Kibler and
• Timo Jacob

Beilstein J. Nanotechnol. 2014, 5, 1349–1356, doi:10.3762/bjnano.5.148

• formation [23]. The voltammetric peak at −0.18 V for Ir(210) after potential cycles, which indicates (311) facets, is not as sharp as that of thermally-induced faceted Ir(210) [20]. While thermal activation is effective, electrochemical activation by potential cycling at room temperature seems to work

• image, the electrochemically facetted Ir(210) surfaces are not as well-defined as the faceted surfaces obtained after thermal activation. Increasing the cycling time to 60 min resulted in the formation of larger triangular structures (see black triangle in Figure 6c), which cover the whole Ir(210

Adsorption and oxidation of formaldehyde on a polycrystalline Pt film electrode: An in situ IR spectroscopy search for adsorbed reaction intermediates

• Zenonas Jusys and
• R. Jürgen Behm

Beilstein J. Nanotechnol. 2014, 5, 747–759, doi:10.3762/bjnano.5.87

• upon formaldehyde dehydrogenation with temperature indicates a thermal activation of the C–H bond dissociation, whereas the decrease in the COad formation rate upon deuterium substitution implies a primary kinetic H/D isotope effect (kH/kD). The observation of a kinetic isotope effect means that the C

Nanoscopic surfactant behavior of the porin MspA in aqueous media

• Ayomi S. Perera,
• Hongwang Wang,
• Tej B. Shrestha,
• Deryl L. Troyer and
• Stefan H. Bossmann

Beilstein J. Nanotechnol. 2013, 4, 278–284, doi:10.3762/bjnano.4.30

• × PBS) or 318 K ((5 × 10−5)× PBS) could be caused by a thermal activation step required for vesicle formation. Due to the thermal stability of MspA, it is reasonable to assume that the number of vesicles decreases while their diameters increase, because the concentration of free MspA will be very low

• . Since MspA is a large surfactant, the requirement for thermal activation is comprehensible. It should also be noted that many classic vesicles/liposomes are not in their thermodynamic minimum [32]. Conclusion TEM has provided experimental evidence that the mycobacterial porin MspA forms vesicles at low

• 318 K (diluted PBS). The occurrence of a temperature maximum is indicative of a thermal activation step required for the formation of bilayers from MspA, which is a rather large surfactant of 9.6 nm in length and 8.8 nm in diameter. Increasing the temperature favors reversible cation (Na+, K